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HGTG20N50C1D

Intersil Corporation
Part Number HGTG20N50C1D
Manufacturer Intersil Corporation
Description N-Channel IGBT
Published Mar 23, 2005
Detailed Description HGTG20N50C1D April 1995 20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode Package JEDEC STYLE TO-247 EMITTER ...
Datasheet PDF File HGTG20N50C1D PDF File

HGTG20N50C1D
HGTG20N50C1D

Overview
HGTG20N50C1D April 1995 20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode Package JEDEC STYLE TO-247 EMITTER COLLECTOR COLLECTOR (BOTTOM SIDE METAL) GATE Features • 20A, 500V • Latch Free Operation • Typical Fall Time < 500ns • High Input Impedance • Low Conduction Loss • With Anti-Parallel Diode • tRR < 60ns Description The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors.
The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
The much lower on-state voltage drop varies only moderately between +25oC and +150oC.
The diode used in parallel with the IGBT is an...


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