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HGTG20N60C3D

Fairchild Semiconductor
Part Number HGTG20N60C3D
Manufacturer Fairchild Semiconductor
Description N-Channel IGBT
Published Mar 23, 2005
Detailed Description HGTG20N60C3D Data Sheet December 2001 45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG2...
Datasheet PDF File HGTG20N60C3D PDF File

HGTG20N60C3D
HGTG20N60C3D

Overview
HGTG20N60C3D Data Sheet December 2001 45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors.
This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
The much lower on-state voltage drop varies only moderately between 25 oC and 150oC.
The IGBT used is development type TA49178.
The diode used in anti-parallel with the IGBT is the RHRP3060 (TA49063).
The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as...


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