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SIHLD014

Vishay
Part Number SIHLD014
Manufacturer Vishay
Description Power MOSFET
Published Feb 18, 2014
Detailed Description IRLD014, SiHLD014 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Co...
Datasheet PDF File SIHLD014 PDF File

SIHLD014
SIHLD014

Overview
IRLD014, SiHLD014 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.
) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 5 V 8.
4 2.
6 6.
4 Single D FEATURES 60 0.
20 • Dynamic dV/dt Rating • For Automatic Insertion • End Stackable • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V • 175 °C Operating Temperature • Fast Switching • Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT HVMDIP DESCRIPTION G S D S N-Channel MOSFET G Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertiable case style which can be stacked in multiple combinations on standard 0.
1" pin centers.
The dual drain servers as a thermal link to the mounting surface for power dissipation levels up to 1 W.
ORDERING INFORMATION Package Lead (Pb)-free SnPb HVMDIP IRLD014PbF SiHLD014-E3 IRLD014 SiHLD014 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Maximum Power Dissipation Peak Diode Recovery dV/dtc TA = 25 °C EAS PD dV/dt TJ, Tstg for 10 s VGS at 5.
0 V TA = 25 °C TA = 100 °C SYMBOL VDS VGS ID IDM LIMIT 60 ± 10 1.
7 1.
2 14 0.
0083 490 1.
3 4.
5 - 55 to + 175 300d W/°C mJ W V/ns °C A UNIT V Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Notes a.
Repetitive rating; pulse width limited by maximum junction temperature (see fig.
11).
b.
VDD = 25 V, starting TJ = 25 °C, L = 197 mH, Rg = 25 , IAS = 1.
7 A (see fig.
12).
c.
ISD  10 A, dI/dt  90 A/µs, VDD  VDS, TJ  175 °C.
d.
1.
6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91307 S10-2465-Rev.
D, 08-Nov-10 www.
vishay.
com 1 Free Datasheet http://www.
datasheet4u.
net/ IR...


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