Silicon NPN Power Transistors
Description
isc Silicon NPN Power Transistors
BD501/B
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 50V(Min) 80V(Min)
·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in high power audio amplifiers utilizing
complementary or quasi complementary circuits.
ABSOL...
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