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HGTP7N60B3D

Fairchild Semiconductor
Part Number HGTP7N60B3D
Manufacturer Fairchild Semiconductor
Description N-Channel IGBT
Published Mar 23, 2005
Detailed Description HGTP7N60B3D, HGT1S7N60B3DS Data Sheet December 2001 14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast ...
Datasheet PDF File HGTP7N60B3D PDF File

HGTP7N60B3D
HGTP7N60B3D

Overview
HGTP7N60B3D, HGT1S7N60B3DS Data Sheet December 2001 14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode The HGTP7N60B3D and HGT1S7N60B3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors.
These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
The much lower on-state voltage drop varies only moderately between 25 oC and 150oC at rated current.
The IGBT is developmental type TA49190.
The diode used in anti-parallel with the IGBT is the RHRD660 (TA49057).
The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
Formerly Developmental Type TA49191.
Features • 14A, 600V, TC = 25oC • 600V Switching SOA Capability • Typical Fall Time.
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120ns ...


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