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NTB6N60

ON Semiconductor
Part Number NTB6N60
Manufacturer ON Semiconductor
Description Power MOSFET
Published Feb 21, 2014
Detailed Description NTP6N60, NTB6N60 Preferred Device Advance Information Power MOSFET 6 Amps, 600 Volts N–Channel TO–220 and D2PAK Design...
Datasheet PDF File NTB6N60 PDF File

NTB6N60
NTB6N60

Overview
NTP6N60, NTB6N60 Preferred Device Advance Information Power MOSFET 6 Amps, 600 Volts N–Channel TO–220 and D2PAK Designed for high voltage, high speed switching applications in power supplies, converters, power motor controls and bridge circuits.
Features http://onsemi.
com • • • • • • • • • • Higher Current Rating Lower RDS(on) Lower Capacitances Lower Total Gate Charge Tighter VSD Specifications Avalanche Energy Specified Switch Mode Power Supplies PWM Motor Controls Converters Bridge Circuits 6 AMPERES 600 VOLTS RDS(on) = 1200 mΩ N–Channel D Typical Applications G 4 S 1 Unit Vdc Vdc Vdc VGS VGSM ID ID IDM PD TJ, Tstg EAS "20 "40 Adc – Continuous – Continuous @ 100°C – Single Pulse (tpv10 µs) Total Power Dissipation Derate above 25°C Operating and Storage Temperature Range Single Drain–to–Source Avalanche Energy – Starting TJ = 25°C (VDD = 100 V, VGS = 10 Vdc, IL = 6 A, L = 25 mH, RG = 25 Ω) Thermal Resistance – Junction–to–Case – Junction–to–Ambient – Junction–to–Ambient (Note 1...


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