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RQJ0303PGDQA

Part Number	RQJ0303PGDQA
Manufacturer	Renesas
Description	Silicon P Channel MOS FET
Published	Feb 22, 2014
Detailed Description	Preliminary Datasheet RQJ0303PGDQA Silicon P Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 54 ...
Datasheet	RQJ0303PGDQA PDF File

Overview

Preliminary Datasheet RQJ0303PGDQA Silicon P Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 54 mΩ typ (VGS = –10 V, ID = –1.
6 A) • Low drive current • High speed switching • 4.
5 V gate drive R07DS0295EJ0600 Rev.
6.
00 Jan 10, 2014 Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 D 3 G 1 2 S 1 2 1.
Source 2.
Gate 3.
Drain Note: Marking is “PG”.
Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body - drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(Pulse) Note1 IDR Pch Note2 Tch Tstg Ratings –30 +10 / –20 –3.
3 –...

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RQJ0303PGDQA Silicon P Channel MOS FET - Renesas

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