FCH25N60N
Description
FCH25N60N — N-Channel SupreMOS® MOSFET
December 2013
FCH25N60N
N-Channel SupreMOS® MOSFET
600 V, 25 A, 126 mΩ Features
RDS(on) = 108 mΩ (Typ.) @ VGS = 10 V, ID = 12.5 A Ultra Low Gate Charge (Typ. Qg = 57 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 262 pF) 100% Avalanche Tested RoHS Compliant
Description
The SupreMOS® MOSFET is Fairc...
Fairchild Semiconductor
25N60N PDF File
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