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APT65GP60JDQ2

Advanced Power Technology
Part Number APT65GP60JDQ2
Manufacturer Advanced Power Technology
Description IGBT
Published Feb 26, 2014
Detailed Description TYPICAL PERFORMANCE CURVES ® APT65GP60JDQ2 600V APT65GP60JDQ2 POWER MOS 7 IGBT ® E G C E The POWER MOS 7® IGBT is ...
Datasheet PDF File APT65GP60JDQ2 PDF File

APT65GP60JDQ2
APT65GP60JDQ2


Overview
TYPICAL PERFORMANCE CURVES ® APT65GP60JDQ2 600V APT65GP60JDQ2 POWER MOS 7 IGBT ® E G C E The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs.
Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies.
• Low Conduction Loss • Low Gate Charge • Ultrafast Tail Current shutoff • 100 kHz operation @ 400V, 33A • 50 kHz operation @ 400V, 47A • SSOA Rated S OT 22 7 ISOTOP ® "UL Recognized" file # E145592 C G E MAXIMUM RATINGS Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 110°C Pulsed Collector Current 1 All Ratings: TC = 25°C unless otherwise specified.
APT65GP60JDQ2 UNIT Volts 600 ±30 130 60 250 250A @ 600V 431 -55 to 150 300 Amps @ TC = 150°C Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max.
Lead Temp.
for Soldering: 0.
063" from Case for 10 Sec.
Watts °C STATIC ELECTRICAL CHARACTERISTICS Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 1000µA) Gate Threshold Voltage (VCE = VGE, I C = 2.
5mA, Tj = 25°C) MIN TYP MAX Units 600 3 4.
5 2.
2 2.
1 1250 µA nA 6-2005 Free Datasheet http://www.
datasheet-pdf.
com/ 6 2.
7 Collector-Emitter On Voltage (VGE = 15V, I C = 65A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 65A, Tj = 125°C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 2 2 Volts I CES I GES Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) Gate-Emitter Leakage Current (VGE = ±20V) 5500 ±100 CAUTION: These Devices are Sensitive to Electrostatic Discharge.
Proper Handling Procedures Should Be Followed.
Downloaded from Elcodis.
com electronic components distributor 050-7453 APT Website - http://www.
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