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BLS6G2735L-30

NXP
Part Number BLS6G2735L-30
Manufacturer NXP
Description S-band LDMOS transistor
Published Mar 3, 2014
Detailed Description BLS6G2735L-30; BLS6G2735LS-30 S-band LDMOS transistor Rev. 3 — 24 September 2012 Product data sheet 1. Product profile ...
Datasheet PDF File BLS6G2735L-30 PDF File

BLS6G2735L-30
BLS6G2735L-30

Overview
BLS6G2735L-30; BLS6G2735LS-30 S-band LDMOS transistor Rev.
3 — 24 September 2012 Product data sheet 1.
Product profile 1.
1 General description 30 W LDMOS power transistor for S-band radar applications in the frequency range from 2.
7 GHz to 3.
5 GHz.
Table 1.
Application information Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 50 mA.
Test signal f (GHz) pulsed RF pulsed RF pulsed RF 3.
1 to 3.
5 2.
7 to 3.
3 2.
7 to 3.
5 VDS (V) 32 32 32 PL (W) 30 35 30 Gp (dB) 13 14 12 D (%) 50 50 47 tr (ns) 20 20 20 tf (ns) 10 10 10 Typical RF performance in a class-AB production test circuit in band 3.
1 GHz to 3.
5 GHz Typical RF performance in an application circuit in small band 2.
7 G...


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