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C2D10120D

Cree
Part Number C2D10120D
Manufacturer Cree
Description Silicon Carbide Schottky Diode
Published Mar 12, 2014
Detailed Description C2D10120D Silicon Carbide Schottky Diode VRRM = 1200 V Zero R Features ecovery® Rectifier Package IF (TC=135˚C...
Datasheet PDF File C2D10120D PDF File

C2D10120D
C2D10120D

Overview
C2D10120D Silicon Carbide Schottky Diode VRRM = 1200 V Zero R Features ecovery® Rectifier Package IF (TC=135˚C) = 18 A** Qc = 56 nC** • • • • • • • 1.
2kV Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation Temperature-Independent Switching Behavior Extremely Fast Switching Positive Temperature Coefficient on VF TO-247-3 Benefits • • • • • Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway Applications • • • Switch Mode Power Supplies Power Factor Correction Motor Drives Part Number C2D10120D Package TO-247-3 Marking C2D10120 Maximum Ratings (TC=25°C unless otherwise specified) Symbol VRRM VRSM VDC IF IFRM IFSM Ptot TJ , Tstg Parameter Repetitive Peak Reverse Voltage Surge Peak Reverse Voltage DC Blocking Voltage Value 1200 1200 1200 18/36 9/18 5/10 30* 100* 138/276 60/120 -55 to +175 1 8.
8 Unit V V V Test Conditions Note Continuous Forward Current (Per Leg/Device) A TC=25˚C TC=135˚C TC=157˚C TC=25˚C, tP=10 ms, Half Sine Wave TC=25˚C, tP=10 µs, Pulse TC=25˚C TC=110˚C Repetitive Peak Forward Surge Current Non-Repetitive Peak Forward Surge Current Power Dissipation (Per Leg/Device) Operating Junction and Storage Temperature TO-247 Mounting Torque A A W ˚C Nm lbfin M3 Screw 6-32 Screw * Per Leg, ** Per Device 1 C2D10120D Rev.
H Free Datasheet http://www.
nDatasheet.
com Electrical Characteristics (Per Leg) Symbol VF IR QC Parameter Forward Voltage Reverse Current Total Capacitive Charge Typ.
1.
6 2.
6 50 100 28 455 45 33 Max.
1.
8 3.
0 200 1000 Unit V μA nC Test Conditions IF = 5 A TJ=25°C IF = 5 A TJ=175°C VR = 1200 V TJ=25°C VR = 1200 V TJ=175°C VR = 1200 V, IF = 5 A di/dt = 500 A/μs TJ = 25°C VR = 0 V, TJ = 25°C, f = 1 MHz VR = 200 V, TJ = 25˚C, f = 1 MHz VR = 400 V, TJ = 25˚C, f = 1 MHz Note C Total Capacitance p...


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