DatasheetsPDF.com

IRG4BC40WLPBF

International Rectifier
Part Number IRG4BC40WLPBF
Manufacturer International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR
Published Mar 31, 2014
Detailed Description PD - 95788B INSULATED GATE BIPOLAR TRANSISTOR IRG4BC40WSPbF IRG4BC40WLPbF C Features • Designed expressly for Switch...
Datasheet PDF File IRG4BC40WLPBF PDF File

IRG4BC40WLPBF
IRG4BC40WLPBF

Overview
PD - 95788B INSULATED GATE BIPOLAR TRANSISTOR IRG4BC40WSPbF IRG4BC40WLPbF C Features • Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50% reduction of Eoff parameter • Low IGBT conduction losses • Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability • Lead-Free VCES = 600V G E VCE(on) typ.
= 2.
05V @VGE = 15V, IC = 20A n-channel Benefits • Lower switching losses allow more cost-effective operation than power MOSFETs up to 150 kHz ("hard switched" mode) • Of particular benefit to single-ended converters and boost PFC topologies 150W and higher • Low conduction losses and minimal minority-carrier recombination make these an excellent option for resonant mode switching as well (up to >>300 kHz) D2 Pak IRG4BC40WSPbF TO-262 IRG4BC40WLPbF Absolute Maximum Ratings Parameter VCES IC @ TC = 2...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)