INSULATED GATE BIPOLAR TRANSISTOR
Description
PD - 97479
INSULATED GATE BIPOLAR TRANSISTOR Features
Low VCE (ON) trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient Tight parameter distribution Lead -Free
IRG7PH35UPbF IRG7PH35U-EP
C
VCES = 1200V I NOMINAL = 20A
G E
TJ...
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