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IRG7PH37K10D-EPBF

International Rectifier
Part Number IRG7PH37K10D-EPBF
Manufacturer International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR
Published Mar 31, 2014
Detailed Description   IRG7PH37K10DPbF IRG7PH37K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V I...
Datasheet PDF File IRG7PH37K10D-EPBF PDF File

IRG7PH37K10D-EPBF
IRG7PH37K10D-EPBF

Overview
  IRG7PH37K10DPbF IRG7PH37K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V IC = 25A, TC =100°C tSC 10µs, TJ(max) = 150°C VCE(ON) typ.
= 1.
9V @ IC = 15A G E   C   G G n-channel Applications • Industrial Motor Drive • UPS G Gate G IRG7PH37K10DPbF  TO‐247AC  C Collector C E C E G IRG7PH37K10D‐EPbF  TO‐247AD  E Emitter Features Low VCE(ON) and Switching Losses 10µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 150°C Positive VCE (ON) Temperature Coefficient Base part number IRG7PH37K10DPBF IRG7PH37K10D-EPBF Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C VGE PD @...


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