INSULATED GATE BIPOLAR TRANSISTOR
Description
PD - 97759
IRG7RC10FDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
Low VCE(on) Zero VCE(on) temperature coefficient 3µs Short Circuit Capability Ultra Fast Soft Recovery Co-pak Diode Square RBSOA
G E C
VCES = 600V IC = 9.0A, TC = 100°C tsc > 3μs, Tjmax = 150°C VCE(on) typ. = 1.6V @ IC = 5A
n-channel
Benefits
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