INSULATED GATE BIPOLAR TRANSISTOR
Description
IRGP4263PbF IRGP4263-EPbF
Insulated Gate Bipolar Transistor VCES = 650V IC = 60A, TC =100°C tSC 5.5µs, TJ(max) = 175°C VCE(ON) typ. = 1.7V @ IC = 48A
G E
C
G
G
n-channel
Applications Industrial Motor Drive Inverters UPS Welding G Gate
C G IRGP4263PbF C Collector
E G
C I RGP4263‐EPbF E Emitter
E
Features
Low VCE(ON) and switchin...
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