INSULATED GATE BIPOLAR TRANSISTOR
Description
PD - 96358
INSULATED GATE BIPOLAR TRANSISTOR
Features
Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Lead-Free
IRGS15B60KPbF
C
VCES = 600V IC = 15A, TC=100°C
G E
tsc > 10µs, TJ=150°C VCE(on) typ. = 1.8V
n-channel
Benefits
Benchmark Efficiency for Motor...
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