N-channel MOSFET
Description
SAMWIN
SW7N90
N-channel MOSFET
Features
■ High ruggedness ■ RDS(ON) (Max 1.8 Ω)@VGS=10V ■ Gate Charge (Typical 50nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested
BVDSS : 900V ID : 7.0A RDS(ON) : 1.8ohm
2
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable po...
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