2SA1020
Description
2SA1020
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1020
Power Amplifier Applications Power Switching Applications
Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) High-speed switching: tstg = 1.0 µs (typ.) Complementary to 2SC2655 Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Collector-base voltage Col...
Toshiba Semiconductor
A1020 PDF File
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