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IRHLNM77110

International Rectifier
Part Number IRHLNM77110
Manufacturer International Rectifier
Description Power MOSFET
Published Apr 22, 2014
Detailed Description PD-97326A RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-0.2) Product Summary Part Number IRHLNM77110 I...
Datasheet PDF File IRHLNM77110 PDF File

IRHLNM77110
IRHLNM77110


Overview
PD-97326A RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-0.
2) Product Summary Part Number IRHLNM77110 IRHLNM73110 Radiation Level 100K Rads (Si) 300K Rads (Si) RDS(on) 0.
29Ω 0.
29Ω ID 6.
5A 6.
5A 2N7609U8 IRHLNM77110 100V, N-CHANNEL TECHNOLOGY ™ International Rectifier’s R7TM Logic Level Power MOSFETs provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments.
The threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation.
This is achieved while maintaining single event gate rupture and single event burnout immunity.
The device is ideal when used to interface directly with most logic gates, linear IC’s, micro-controllers, and other device types that operate from a 3.
3-5V source.
It may also be used to increase the output current of a PWM, voltage comparator or an operational amplifier where the logic level drive signal is available.
SMD-0.
2 Features: n n n n n n n n n n 5V CMOS and TTL Compatible Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Surface Mount Light Weight Absolute Maximum Ratings Parameter ID @VGS = 4.
5V,TC = 25°C ID @VGS = 4.
5V,TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max.
Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Operating Junction Storage Temperature Range Pckg.
Mounting Surface Temp.
Weight For footnotes refer to the last page 6.
5 4.
1 26 23.
2 0.
18 ±10 21 6.
5 2.
32 4.
3 -55 to 150 300 (for 5s) 0.
25 (Typical) Pre-Irradiation Units A W W/°C V mJ A mJ V/ns °C g www.
irf.
com 1 02/21/12 Free Datasheet http://www.
Datasheet4U.
com IRHLNM77110, 2N7609U8 Pre-Irradiation Electrical Charac...



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