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FDP61N20

Fairchild Semiconductor
Part Number FDP61N20
Manufacturer Fairchild Semiconductor
Description N-Channel MOSFET
Published Apr 22, 2014
Detailed Description FDP61N20 — N-Channel UniFETTM MOSFET FDP61N20 N-Channel UniFETTM MOSFET 200 V, 61 A, 41 mΩ Features • RDS(on) = 34 mΩ (...
Datasheet PDF File FDP61N20 PDF File

FDP61N20
FDP61N20

Overview
FDP61N20 — N-Channel UniFETTM MOSFET FDP61N20 N-Channel UniFETTM MOSFET 200 V, 61 A, 41 mΩ Features • RDS(on) = 34 mΩ (Typ.
) @ VGS = 10 V, ID = 30.
5 A • Low Gate Charge (Typ.
58 nC) • Low Crss (Typ.
80 pF) • 100% Avalanche Tested Applications • PDP TV • Lighting • Uninterruptible Power Supply • AC-DC Power Supply November 2013 Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength.
This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
D GDS TO-220 G S Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuo...


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