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K3444

Toshiba Semiconductor
Part Number K3444
Manufacturer Toshiba Semiconductor
Description 2SK3444
Published May 5, 2014
Detailed Description 2SK3444 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3444 Switching Regulator, DC-DC Converte...
Datasheet PDF File K3444 PDF File

K3444
K3444

Overview
2SK3444 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3444 Switching Regulator, DC-DC Converter Applications Motor Drive Applications • • • • Low drain-source ON resistance: RDS (ON) = 65 mΩ (typ.
) High forward transfer admittance: |Yfs| = 10 S (typ.
) Low leakage current: IDSS = 100 µA (VDS = 200 V) Enhancement mode: Vth = 3.
0 to 5.
0 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 200 200 ±30 25 100 125 488 25 12.
5 150 −55 to 150 Unit V V V A W mJ A mJ °C °C Pulse (Note 1) Dr...


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