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TK18A50D

Toshiba
Part Number TK18A50D
Manufacturer Toshiba
Description Silicon N-Channel MOSFET
Published May 5, 2014
Detailed Description TK18A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK18A50D Switching Regulator Applications ...
Datasheet PDF File TK18A50D PDF File

TK18A50D
TK18A50D

Overview
TK18A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK18A50D Switching Regulator Applications • • • • Low drain-source ON resistance: RDS (ON) = 0.
22 Ω (typ.
) High forward transfer admittance: ⎪Yfs⎪ = 8.
5 S (typ.
) Low leakage current: IDSS = 10 μA (max) (VDS = 500 V) Enhancement-mode: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 500 ±30 18 72 50 533 18 5.
0 150 −55 to 150 Unit V V A W mJ A mJ °C °C 1: Gate 2: Drain 3: Source Drain power dissipation (Tc = 25°C) Single puls...


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