SiC Schottky Barrier Diode
Description
SCS220AE
SiC Schottky Barrier Diode
lOutline
Data Sheet
VR IF QC
lFeatures 1) Shorter recovery time
650V 20A 31nC
TO-247
(1) (2)
(3)
lInner circuit
2) Reduced temperature dependence 3) High-speed switching possible
(1) N/C (2) Cathode (3) Anode
(1) (2) (3)
lPackaging specifications Packaging lConstruction Silicon carbide epitaxial planer Shottoky Di...
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