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IRF650A
Advanced Power MOSFET
Description
Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µ A (Max.) @ VDS = 200V Low RDS(ON) : 0.071 Ω (Typ.) 1 2 3 IRF650A BVDSS = 200 V RDS(on) = 0.085 Ω ID = 28 A TO-220 1.Gate 2. Drain 3. Source Absolute Maximum Ratings S...
Fairchild
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