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IRLU3636PBF

International Rectifier
Part Number IRLU3636PBF
Manufacturer International Rectifier
Description Power MOSFET
Published May 22, 2014
Detailed Description PD - 96224 Applications l DC Motor Drive l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Su...
Datasheet PDF File IRLU3636PBF PDF File

IRLU3636PBF
IRLU3636PBF

Overview
PD - 96224 Applications l DC Motor Drive l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G IRLR3636PbF IRLU3636PbF HEXFET® Power MOSFET D Benefits l Optimized for Logic Level Drive l Very Low RDS(ON) at 4.
5V VGS l Superior R*Q at 4.
5V VGS l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free GD S VDSS RDS(on) typ.
max.
ID (Silicon Limited) ID (Package Limited) D 60V 5.
4m: 6.
8m: 99A 50A c S G S D G D-Pak I-Pak IRLR3636PbF IRLU3636PbF S Gate Drain Source Absolute Maximum Ratings Symbol ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max.
99 70 50 396 143 0.
95 ±16 22 c c Units A d W W/°C V V/ns °C f -55 to + 175 300 (1.
6mm from case) 170 See Fig.
14, 15, 22a, 22b Avalanche Characteristics EAS (Thermally limited) IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy d e d j mJ A mJ Thermal Resistance Symbol RθJC RθJA RθJA Junction-to-Case Junction-to-Ambient (PCB Mount) Junction-to-Ambient k Parameter Typ.
––– ––– ––– Max.
1.
05 50 110 Units °C/W www.
irf.
com 1 http://www.
Datasheet4U.
com 02/06/09 IRLR/U3636PbF Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min.
Typ.
Max.
Units 60 ––– ––– ––– 1.
0 ––– ––– ––– ––– ––– Conditions V(BR)DSS Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp.
Coefficient RDS(on) VGS(th) IDSS IGSS RG(int) Static Drain-to-Sou...


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