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TK3P50D

Toshiba
Part Number TK3P50D
Manufacturer Toshiba
Description Silicon N-Channel MOSFET
Published May 22, 2014
Detailed Description MOSFETs Silicon N-Channel MOS (π-MOS) TK3P50D 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-...
Datasheet PDF File TK3P50D PDF File

TK3P50D
TK3P50D

Overview
MOSFETs Silicon N-Channel MOS (π-MOS) TK3P50D 1.
Applications • Switching Voltage Regulators 2.
Features (1) Low drain-source on-resistance: RDS(ON) = 2.
3 Ω (typ.
) (2) High forward transfer admittance: |Yfs| = 1.
0 S (typ.
) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 500 V) (4) Enhancement mode: Vth = 2.
4 to 4.
4 V (VDS = 10 V, ID = 1 mA) 3.
Packaging and Internal Circuit TK3P50D 1: Gate (G) 2: Drain (D)(HEAT SINK) 3: Source (S) DPAK 4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 500 V Gate-source voltage VGSS ±30 Drain current (DC) (Note 1) ID 3 A Drain current (pulsed) (Note 1...


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