N-Channel MOSFET
Description
FDMC7678 N-Channel Power Trench® MOSFET
FDMC7678
N-Channel Power Trench® MOSFET
30 V, 19.5 A, 5.3 mΩ
Features
Max rDS(on) = 5.3 mΩ at VGS = 10 V, ID = 17.5 A Max rDS(on) = 6.8 mΩ at VGS = 4.5 V, ID = 15.0 A High performance technology for extremely low rDS(on) Termination is Lead-free and RoHS Compliant
November 2013
General Description
This N-Cha...
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