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IRF2907ZSPbF

International Rectifier
Part Number IRF2907ZSPbF
Manufacturer International Rectifier
Description Power MOSFET
Published Jun 4, 2014
Detailed Description PD - 95489D Features l l l l l l IRF2907ZPbF IRF2907ZSPbF IRF2907ZLPbF HEXFET® Power MOSFET D Advanced Process Techno...
Datasheet PDF File IRF2907ZSPbF PDF File

IRF2907ZSPbF
IRF2907ZSPbF

Overview
PD - 95489D Features l l l l l l IRF2907ZPbF IRF2907ZSPbF IRF2907ZLPbF HEXFET® Power MOSFET D Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free VDSS = 75V RDS(on) = 4.
5mΩ G S Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
These features combine to make this design an extremely efficient and reliable device for use in a wide variety of TO-220AB applications.
ID = 160A∗ D2 Pak IRF2907ZPbF IRF2907ZSPbF TO-262 IRF2907ZLPbF Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C VGS EAS EAS (tested) IAR EAR TJ TSTG Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (See Fig.
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