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SiHFPF40

Vishay
Part Number SiHFPF40
Manufacturer Vishay
Description Power MOSFET
Published Jun 5, 2014
Detailed Description IRFPF40, SiHFPF40 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Co...
Datasheet PDF File SiHFPF40 PDF File

SiHFPF40
SiHFPF40

Overview
IRFPF40, SiHFPF40 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.
) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 120 16 67 Single D FEATURES 900 2.
5 • • • • • • • Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT TO-247AC DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combi nation of fast swi tching, ruggedized device des ign, low on -resistance a nd cost-effectiveness.
The TO247AC pa ckage is p referred f or commercial-industrial app lications wh ere higher pow er levels precl ude the use of TO-220AB de vices.
The TO-247AC i s similar bu t superi or to the earlier TO-218 package be cause of i ts isola ted moutin g hole .
It a lso provides greater creepage distance b etween pins to meet the requirements of most safety specifications.
G S D G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-247AC IRFPF40PbF SiHFPF40-E3 IRFPF40 SiHFPF40 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER S Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque for 10 s 6-32 or M3 screw TC = 25 °C EAS IAR EAR PD dV/dt 1.
5 TJ, Tstg - 55 to + 150 300d 10 lbf 1.
1 VGS at 10 V TC = 25 °C TC = 100 °C YMBOL VDS VGS ± ID IDM 19 1.
2 500 4.
7 15 150 W/°C mJ A mJ W V/ns °C · in N·m LIMIT 900 20 4.
7 2.
9 A UNIT V Notes a.
Repetitive rating; pulse width limited by maximum junction temperature (see fig.
11).
b.
VDD = 50 V, starting TJ = 25 °C, L = 42 mH, Rg = 25 Ω, IAS = 4.
7 A (see fig.
12).
c.
ISD ≤ 4.
7 A, dI/dt ≤ 110 A/...


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