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IPI60R165CP

Infineon Technologies
Part Number IPI60R165CP
Manufacturer Infineon Technologies
Description Power Transistor
Published Jun 8, 2014
Detailed Description IPI60R165CP CoolMOS® Power Transistor Features • Lowest figure-of-merit R ONxQg • Ultra low gate charge • Extreme dv/dt...
Datasheet PDF File IPI60R165CP PDF File

IPI60R165CP
IPI60R165CP

Overview
IPI60R165CP CoolMOS® Power Transistor Features • Lowest figure-of-merit R ONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant Product Summary V DS @ Tj,max R DS(on),max Q g,typ 650 V 0.
165 Ω 39 nC PG-TO262 CoolMOS CP is designed for: • Hard switching topologies for Server and Telecom Type IPI60R165CP Package PG-TO262 Marking 6R165P Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive t AR2),3) Avalanche current, repetitive t AR2),3) MOSFET dv /dt ruggedness Gate source voltage I D,pulse E AS E AR I AR dv /dt V GS V DS=0.
.
.
480 V static AC (f >1 Hz) Power dissipation Operating and storage temperature P tot T j, T stg T C=25 °C T C=25 °C I D=7.
9 A, V DD=50 V I D=7.
9 A, V DD=50 V Value 21 13 61 522 0.
79 7.
9 50 ±20 ±30 192 -55 .
.
.
150 W °C A V/ns V mJ Unit A Rev.
2.
0 page 1 2008-02-18 http://www.
Datasheet4U.
com IPI60R165CP Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous diode forward current Diode pulse current 2) Reverse diode d v /dt 4) Symbol Conditions IS I S,pulse dv /dt T C=25 °C Value 12 61 15 V/ns Unit A Parameter Symbol Conditions min.
Values typ.
max.
Unit Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction ambient Soldering temperature, wavesoldering only allowed at leads R thJC R thJA leaded 1.
6 mm (0.
063 in.
) from case for 10 s 0.
65 62 K/W T sold - - 260 °C Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage V (BR)DSS V GS=0 V, I D=250 µA V GS(th) V DS=V GS, I D=0.
79 mA V DS=600 V, V GS=0 V, T j=25 °C V DS=600 V, V GS=0 V, T j=150 °C Gate-source leakage current Drain-source on-state resist...


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