High Power RF LDMOS Field Effect Transistor
Description
PTFB241402F
High Power RF LDMOS Field Effect Transistor 140 W, 2300 – 2400 MHz
Description
The PTFB241402F integrates two LDMOS FETs into one open-cavity ceramic package. It is designed for cellular amplifier applications in the 2300 to 2400 MHz frequency band. Manufactured with Infineon’s advanced LDMOS process, this device offers excellent thermal perfor...
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