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P3P4GF4BLF

Deutron Electronics
Part Number P3P4GF4BLF
Manufacturer Deutron Electronics
Description 4G Bits Die DDRIII SDRAM
Published Jun 19, 2014
Detailed Description 4G B Die DDRIII SDRAM Specification P3P4GF4BLF Deutron Electronics Corp. 8F, 68, Sec. 3, NanKing E. RD., Taipei 104, T...
Datasheet PDF File P3P4GF4BLF PDF File

P3P4GF4BLF
P3P4GF4BLF


Overview
4G B Die DDRIII SDRAM Specification P3P4GF4BLF Deutron Electronics Corp.
8F, 68, Sec.
3, NanKing E.
RD.
, Taipei 104, Taiwan, R.
O.
C.
TEL: (886)-2-2517-7768 FAX: (886)-2-2517-4575 P3P4GF4BLF (256M words x 16 bits) Specifications  Density: 4G bits  Organization  32M words  16 bits  8 banks  Package  96-ball FBGA  Lead-free (RoHS compliant) and Halogen-free  Power supply: VDD, VDDQ  1.
5V  0.
075V  Data rate  1600Mbps/1333Mbps/1066Mbps (max.
)  2KB page size  Row address: A0 to A14  Column address: A0 to A9  Eight internal banks for concurrent operation  Interface: SSTL_15  Burst lengths (BL): 8 and 4 with Burst Chop (BC)  Burst type (BT):  Sequential (8, 4 with BC)  Interleave (8, 4 with BC)  /CAS Latency (CL): 5, 6, 7, 8, 9, 10, 11  /CAS Write Latency (CWL): 5, 6, 7, 8  Precharge: auto precharge option for each burst access  Driver strength: RZQ/7, RZQ/6 (RZQ = 240)  Refresh: auto-refresh, self-refresh  Refresh cycles  Average refresh period 7.
8s at 0C  TC  85C 3.
9s at 85C  TC  95C  Operating case temperature range  TC = 0C to +95C Features  Double-data-rate architecture: two data transfers per clock cycle  The high-speed data transfer is realized by the 8 bits prefetch pipelined architecture  Bi-directional differential data strobe (DQS and /DQS) is transmitted/received with data for capturing data at the receiver  DQS is edge-aligned with data for READs; centeraligned with data for WRITEs  Differential clock inputs (CK and /CK)  DLL aligns DQ and DQS transitions with CK transitions  Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS  Data mask (DM) for write data  Posted /CAS by programmable additive latency for better command and data bus efficiency  On-Die Termination (ODT) for better signal quality  Synchronous ODT  Dynamic ODT  Asynchronous ODT  Multi Purpose Register (MPR) for pre-defined pattern read out  ZQ calibration for DQ drive and ODT  Programmable...



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