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IPD14N06S2-80

Infineon Technologies AG
Part Number IPD14N06S2-80
Manufacturer Infineon Technologies AG
Description Power-Transistor
Published Jun 22, 2014
Detailed Description IPD14N06S2-80 OptiMOS® Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 ...
Datasheet PDF File IPD14N06S2-80 PDF File

IPD14N06S2-80
IPD14N06S2-80

Overview
IPD14N06S2-80 OptiMOS® Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested Product Summary V DS R DS(on),max (SMD version) ID 55 80 17 V mΩ A PG-TO252-3-11 Type IPD14N06S2-80 Package PG-TO252-3-11 Marking 2N0680 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol ID Conditions T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Pulsed drain current1) Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN...


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