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PMPB33XP

NXP
Part Number PMPB33XP
Manufacturer NXP
Description single P-channel Trench MOSFET
Published Jun 25, 2014
Detailed Description PMPB33XP 5 September 2012 20 V, single P-channel Trench MOSFET Product data sheet 1. Product profile 1.1 General desc...
Datasheet PDF File PMPB33XP PDF File

PMPB33XP
PMPB33XP

Overview
PMPB33XP 5 September 2012 20 V, single P-channel Trench MOSFET Product data sheet 1.
Product profile 1.
1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.
2 Features and benefits • Trench MOSFET technology • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.
65 mm • Exposed drain pad for excellent thermal conduction • Tin-plated 100 % solderable side pads for optical solder inspection 1.
3 Applications • Charging switch for portable devices • DC-to-DC converters • Power management in battery-driven portable devices • Hard disk and computing power management 1.
4 Quick reference data Table 1.
Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current VGS = -4.
5 V; Tamb = 25 °C; t ≤ 5 s VGS = -4.
5 V; ID = -5.
5 A; Tj = 25 °C [1] Conditions Tj = 25 °C Min -12 - Typ - Max ...


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