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A1930

Toshiba Semiconductor
Part Number A1930
Manufacturer Toshiba Semiconductor
Description 2SA1930
Published Jun 27, 2014
Detailed Description 2SA1930 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1930 Power Amplifier Applications Driver Stage Amplifier Appli...
Datasheet PDF File A1930 PDF File

A1930
A1930

Overview
2SA1930 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1930 Power Amplifier Applications Driver Stage Amplifier Applications Unit: mm • • High transition frequency: fT = 200 MHz (typ.
) Complementary to 2SC5171 Absolute Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C Tc = 25°C Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating −180 −180 −5 −2 −1 2.
0 20 150 −55 to 150 Unit V V V A A W °C °C JEDEC JEITA TOSHIBA ― SC-67 2-10R1A Note: Using continuously under heavy loads (e.
g.
the application of high Weight: 1.
7 g (typ.
) temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appr...


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