2SK1529
Description
2SK1529
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK1529
High Power Amplifier Application
l High breakdown voltage l High forward transfer admittance l Complementary to 2SJ200 : VDSS = 180V : |Yfs| = 4.0 S (typ.) Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Drain−source voltage Gate−source voltage Drain current (Note 1) Symbol VDS...
Toshiba Semiconductor
K1529 PDF File
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