DatasheetsPDF.com

NDT01N60

ON Semiconductor
Part Number NDT01N60
Manufacturer ON Semiconductor
Description N-Channel Power MOSFET
Published Jul 10, 2014
Detailed Description NDD01N60, NDT01N60 N-Channel Power MOSFET 600 V, 8.5 W Features • 100% Avalanche Tested • These Devices are Pb-Free, Ha...
Datasheet PDF File NDT01N60 PDF File

NDT01N60
NDT01N60

Overview
NDD01N60, NDT01N60 N-Channel Power MOSFET 600 V, 8.
5 W Features • 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Drain−to−Source Voltage Continuous Drain Current RqJC Steady State, TC = 25°C (Note 1) Continuous Drain Current RqJC Steady State, TC = 100°C (Note 1) Pulsed Drain Current, tp = 10 ms Power Dissipation – RqJC Steady State, TC = 25°C Gate−to−Source Voltage Single Pulse Drain−to−Source Avalanche Energy (IPK = 1.
0 A) Peak Diode Recovery (Note 2) Source Current (Body Diode) Lead Temperature for Soldering Leads Operating Junction and Storage Temperature Symbol VDSS ID...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)