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NDD01N60T4G

ON Semiconductor
Part Number NDD01N60T4G
Manufacturer ON Semiconductor
Description N-Channel Power MOSFET
Published Jul 10, 2014
Detailed Description NDD01N60, NDT01N60 N-Channel Power MOSFET 600 V, 8.5 W Features • 100% Avalanche Tested • These Devices are Pb-Free, Ha...
Datasheet PDF File NDD01N60T4G PDF File

NDD01N60T4G
NDD01N60T4G

Overview
NDD01N60, NDT01N60 N-Channel Power MOSFET 600 V, 8.
5 W Features • 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Drain−to−Source Voltage Continuous Drain Current RqJC Steady State, TC = 25°C (Note 1) Continuous Drain Current RqJC Steady State, TC = 100°C (Note 1) Pulsed Drain Current, tp = 10 ms Power Dissipation – RqJC Steady State, TC = 25°C Gate−to−Source Voltage Single Pulse Drain−to−Source Avalanche Energy (IPK = 1.
0 A) Peak Diode Recovery (Note 2) Source Current (Body Diode) Lead Temperature for Soldering Leads Operating Junction and Storage Temperature Symbol VDSS ID...


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