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FLM3742-18F

SUMITOMO
Part Number FLM3742-18F
Manufacturer SUMITOMO
Description C-Band Internally Matched FET
Published Jul 14, 2014
Detailed Description FLM3742-18F C-Band Internally Matched FET FEATURES • High Output Power: P1dB = 43.0dBm (Typ.) • High Gain: G1dB = 10.5dB...
Datasheet PDF File FLM3742-18F PDF File

FLM3742-18F
FLM3742-18F

Overview
FLM3742-18F C-Band Internally Matched FET FEATURES • High Output Power: P1dB = 43.
0dBm (Typ.
) • High Gain: G1dB = 10.
5dB (Typ.
) • High PAE: hadd = 37% (Typ.
) • Low IM3 = -46dBc@Po = 32.
0dBm • Broad Band: 3.
7 to 4.
2GHz • Impedance Matched Zin/Zout = 50ohm • Hermetically Sealed Package DESCRIPTION The FLM3742-18F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system.
SEDI's stringent Quality Assurance Program assures the highest reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25deg.
C) Item Symbol Condition Drain-Source Voltage VDS Gate-Source Voltage VGS Total Power Dissipation PT Tc = 25deg.
C Storage Temperature Tstg Channel Temperature Tch SEDI recommends the follow ing conditions for the reliable operation of GaAs FETs: 1.
The drain-source operating voltage (V DS ) should not exceed 10 volts.
2.
The forw ard and reverse gate currents should not exceed 26.
0 and -11.
6 m...


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