DatasheetsPDF.com

FLM5964-8F-001

SUMITOMO
Part Number FLM5964-8F-001
Manufacturer SUMITOMO
Description C-Band Internally Matched FET
Published Jul 14, 2014
Detailed Description FLM5964-8F/001 C-Band Internally Matched FET FEATURES • High Output Power: P1dB=39.5dBm(Typ.) • High Gain: G1dB=9.0dB(Ty...
Datasheet PDF File FLM5964-8F-001 PDF File

FLM5964-8F-001
FLM5964-8F-001

Overview
FLM5964-8F/001 C-Band Internally Matched FET FEATURES • High Output Power: P1dB=39.
5dBm(Typ.
) • High Gain: G1dB=9.
0dB(Typ.
) • High PAE: hadd=35%(Typ.
) • Broad Band: 5.
85 to 6.
75GHz • Impedance Matched Zin/Zout = 50ohm • Hermetically Sealed Package DESCRIPTION The FLM5964-8F/001 is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50ohm system.
ABSOLUTE MAXIMUM RATINGS Item Drain-Source Voltage (Tc=25deg.
C) Gate-Source Voltage (Tc=25deg.
C) Total Pow er Dissipation Storage Tem perature Channel Tem perature Symbol V DS V GS PT Tstg Tch Rating 15 -5 42.
8 -65 to +175 +175 Unit V V W deg.
C deg.
C RECOMMENDED OPERATING CONDITION Item DC Input Voltage Forw ard Gate Current Reverse Gate Current Storage Tem perature Channel Tem perature Sym bol V DS IGF IGR Tstg Tch Condition RG=100 ohm RG=100 ohm -55 to +125 +155 Recom m end 10 +32.
0 -4.
4 Unit V mA mA deg.
C deg.
C ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25deg.
C) Item Drain Current Trans conductance Pinch-off Voltage Gate-Source Breakdow n Voltage Output Pow er at 1dB G.
C.
P.
Pow er Gain at 1dB G.
C.
P.
Drain Current Pow er-added Efficiency Gain Flatness 3rd Order Interm odulation Distortion Therm al Resistance Channel Tem perature Rise CASE STYLE : IB Sym bol IDSS gm Vp V GSO P1dB G1dB Idsr η add DG IM3 Rth DTch Condition V DS=5V , V GS=0V V DS=5V , IDS=2.
2A V DS=5V , IDS=170mA IGS=-170uA V DS=10V f= 5.
85 to 6.
75 GHz IDSDC=0.
65Idss (typ.
) Zs=ZL=50 ohm f=6.
75 GHz Df=10MHz ，2-tone Test Pout=28.
5dBm (S.
C.
L.
) Channel to Case 10V x Idsr x Rth S.
C.
L.
: Single Carrier Level Min.
-0.
5 -5.
0 38.
5 8.
0 -42 Lim it Typ.
3.
4 3.
4 -1.
5 39.
5 9.
0 2.
2 35 -45 3.
0 Max.
5.
2 -3.
0 2.
6 1.
2 3.
5 80 Unit A S V V dBm dB A % dB dBc deg.
C/W deg.
C G.
C.
P.
: Gain Com pression Point ESD Class 3A 4000V to 8000V Note : Based on EIAJ ED-4701 C-111A (C=100pF, R=1.
5kohm) RoHS COMPLIANCE Yes Edition 1.
2 Nov.
2012 1 FLM5964-8F/001 C-Band Internally Matched FET Case Style "IB" Metal-Cerami...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)