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ELM7785-16F

SUMITOMO
Part Number ELM7785-16F
Manufacturer SUMITOMO
Description C-Band Internally Matched FET
Published Jul 14, 2014
Detailed Description ELM7785-16F C-band Internally Matched FET FEATURES High Output Power : P1dB=42.5dBm(typ.) High Gain : G1dB=8.0dB(typ.) H...
Datasheet PDF File ELM7785-16F PDF File

ELM7785-16F
ELM7785-16F

Overview
ELM7785-16F C-band Internally Matched FET FEATURES High Output Power : P1dB=42.
5dBm(typ.
) High Gain : G1dB=8.
0dB(typ.
) High P.
A.
E.
: hadd=37%(typ.
) Broad Band : 7.
7 to 8.
5GHz Impedance Matched Zin/Zout = 50ohm Hermetically Sealed Package DESCRIPTION The ELM7785-16F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50ohm system.
SEDI’s stringent Quality Assurance Program assures the highest reliability and consistent performance.
ABSOLUTE MAXIMUM RATING Item Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Total Power Dissipation PT Storage Temperature TST G TCH Channel Temperature RECOMMENDED OPERATING CONDITIONS Item Symbol DC input Voltage VDS Forward Gate Current IGF Reverse Gate Current IGR Storage Temperature TST G Channel Temperature TCH Rating 15 -5 46.
9 -65 to +175 + 175 Unit V V W deg.
C deg.
C Condition RG=51ohm RG=51ohm Recommend < 10 < +43.
0 > -11.
0 -55 to +125 + 155 Unit V mA mA deg.
C deg.
C ELECTRICAL CHARACTEEISTICS ( Case Temperature Tc=25 deg.
C ) Item Drain Current Transconductance Pinch-off Voltage Gate-Source Breakdown Voltage Symbol IDSS gm VP VGSO f P1dB G1dB Idsr hadd DG IM3 Rth DTch Test Conditions VDS=5V, V GS=0V VDS=5V, IDS=4200mA VDS=5V, IDS=300mA IGS=-300uA VDS=10V IDS(DC)=2800mA(typ.
) Zs=Zl=50ohm Min.
-0.
5 -5 7.
7 41.
5 7.
0 -40 - Limits Typ.
7600 5000 -1.
5 42.
5 8.
0 4000 37 -43 2.
7 - Max.
10500 -3.
0 8.
5 4600 1.
2 3.
2 100 Unit mA mS V V GHz dBm dB mA % dB dBc deg.
C/W deg.
C Frequency Range Output Power at 1dB G.
C.
P.
Power Gain at 1dB G.
C.
P.
Drain Current at 1dB G.
C.
P.
Power Added Efficiency Gain Flatness 3rd Order Inter Modulation Distortion Thermal Resistance Channel Temperature Rise f=8.
5GHz, Df=10MHz, 2-Tone Test Pout=31.
5dBm ( S.
C.
L.
) Channel to Case (V DS x Idsr - P OUT + P IN ) x Rth G.
C.
P.
= Gain Compression Point S.
C.
L.
= Single Carrier Level Note : RF-Test is measured with Vgs-Constant Circuit ESD CASE STYLE RoHS Compliance class 3A IK Yes @JE...


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