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B1132

UTC
Part Number B1132
Manufacturer UTC
Description 2SB1132
Published Jul 15, 2014
Detailed Description UNISONIC TECHNOLOGIES CO., LTD 2SB1132 MEDIUM POWER TRANSISTOR 1 PNP SILICON TRANSISTOR DESCRIPTION The UTC 2SB1132 is...
Datasheet PDF File B1132 PDF File

B1132
B1132

Overview
UNISONIC TECHNOLOGIES CO.
, LTD 2SB1132 MEDIUM POWER TRANSISTOR 1 PNP SILICON TRANSISTOR DESCRIPTION The UTC 2SB1132 is a epitaxial planar type PNP silicon transistor.
SOT-89 FEATURES * Low VCE(SAT).
VCE(SAT) = -0.
2V(Typ.
) (IC/IB= -500mA/-50mA) 1 TO-252 *Pb-free plating product number: 2SB1132L ORDERING INFORMATION Order Number Package Normal Lead Free Plating www.
DataSheet4U.
com 2SB1132-x-AB3-R 2SB1132L-x-AB3-R SOT-89 2SB1132-x-TN3-R 2SB1132L-x-TN3-R TO-252 2SB1132-x-TN3-T 2SB1132L-x-TN3-T TO-252 Pin Assignment 1 2 3 B C E B C E B C E Packing Tape Reel Tape Reel Tube 2SB1132L-x-AB3-R (1)Packing Type (2)Package Type (3)Rank (4)Lead Plating (1) R: Tape Reel, T: Tube (2) AB3: SOT-89, TN3: TO-252 (3) x: refer to Classification of hFE (4) L: Lead Free Plating, Blank: Pb/Sn www.
unisonic.
com.
tw Copyright © 2005 Unisonic Technologies Co.
, Ltd 1 of 4 QW-R208-016,B 2SB1132 PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current Single pulse, Pw=100ms SYMBOL VCBO VCEO VEBO PNP SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified) RATINGS UNIT -40 V -32 V -5 V DC -1 A IC PULSE -2 A SOT-89 0.
5 W Collector Power Dissipation PC TO-252 1 W Junction Temperature TJ 150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER Collector Base Breakdown Voltage Collector Emitter Breakdown Voltage Emitter Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage DC Current Transfer Ratio Transition Frequency Output Capacitance Note: Measured using pulse current.
SYMBOL BVCBO BVCEO BVEBO ICBO IEBO VCE(SAT) hFE fT Cob TEST CONDITIONS IC = -50µA IC = -1mA IE= -50µA VCB= -20V VEB= -4V I...


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