Silicon N Channel MOS FET
Description
2SK2570
Silicon N Channel MOS FET Low Frequency Power Switching
REJ03G1019-0200 (Previous: ADE-208-574) Rev.2.00 Sep 07, 2005
Features
Low on-resistance RDS(on) = 0.8 Ω typ. (VGS = 4 V, ID = 100 mA) 2.5 V gate drive devices. Small package (MPAK)
Outline
RENESAS Package code: PLSP0003ZB-A (Package name: MPAK)
D 3 1 2 G 1. Source 2. Gate 3. Drain
S
N...
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