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SPN8206

Part Number	SPN8206
Manufacturer	SYNC POWER
Description	Common-Drain Dual N-Channel MOSFET
Published	Jul 24, 2014
Detailed Description	SPN8206 6Common-Drain Dual N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8206 is the Common-Drain Dual N-Channel...
Datasheet	SPN8206 PDF File

Overview

SPN8206 6Common-Drain Dual N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8206 is the Common-Drain Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits where high-side switching.
FEATURES  20V/5.
0A,RDS(ON)=8.
2mΩ@VGS=4.
5V  20V/3.
0A,RDS(ON)=11.
0mΩ@VGS=2.
5V  Super high density cell design for extremely low RDS(ON)  Exceptional on-resistance and maximum DC current capability  ESD capability 2...

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