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K3511

Kexin
Part Number K3511
Manufacturer Kexin
Description MOS Field Effect Transistor
Published Jul 28, 2014
Detailed Description SMD Type MOSFET MOS Field Effect Transistor 2SK3511 TO-263 +0.1 1.27-0.1 Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Featur...
Datasheet PDF File K3511 PDF File

K3511
K3511

Overview
SMD Type MOSFET MOS Field Effect Transistor 2SK3511 TO-263 +0.
1 1.
27-0.
1 Unit: mm +0.
1 1.
27-0.
1 +0.
2 4.
57-0.
2 Features Super low on-state resistance: RDS(on) = 12.
5 m MAX.
(VGS = 10 V, ID = 42 A) +0.
2 8.
7-0.
2 Low Ciss: Ciss = 5900 pF TYP.
Built-in gate protection diode +0.
1 1.
27-0.
1 0.
1max +0.
1 0.
81-0.
1 +0.
2 5.
28-0.
2 2.
54 5.
08 +0.
1 -0.
1 +0.
2 2.
54-0.
2 +0.
2 15.
25-0.
2 +0.
2 2.
54-0.
2 +0.
2 0.
4-0.
2 Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation TC=25 TA=25 Channel temperature Storage temperature * PW 10 s,Duty Cycle 1% Tch Tstg Symbol VDSS VGSS ID Idp * PD Rating 75 20 83 260 100 1.
5 150 -55 to +150 Unit V V A A W Electrical Characteristics Ta = 25 Parameter Drain cut-off current Gate leakage current Gate cutoff voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall ti...


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