DatasheetsPDF.com

STU15L01

SamHop Microelectronics
Part Number STU15L01
Manufacturer SamHop Microelectronics
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
Published Jul 31, 2014
Detailed Description Green Product STU/D15L01 Ver 1.2 S a mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect...
Datasheet PDF File STU15L01 PDF File

STU15L01
STU15L01


Overview
Green Product STU/D15L01 Ver 1.
2 S a mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 100V ID 15A R DS(ON) (m Ω) Max 145 @ VGS=10V 195 @ VGS=4.
5V FEATURES Super high dense cell design for low R DS(ON).
Rugged and reliable.
TO-252 and TO-251 Package.
Halogen free.
G S G D S STU SERIES TO - 252AA( D - PAK ) STD SERIES TO - 251 ( I - PAK ) ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed c d ac Limit 100 ±20 TC=25°C TC=70°C 14.
7 13.
6 59 25 TC=25°C TC=70°C 50 32 -55 to 150 Units V V A A A mJ W W °C Single Pulse Avalanche Energy Maximum Power Dissipation a Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC R JA Thermal Resistance, Junction-to-Case a a 3.
6 50 °C/W °C/W Thermal Resistance, Junction-to-Ambient Details are subject to change without notice.
May,16,2014 1 www.
samhop.
com.
tw STU/D15L01 Ver 1.
2 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS IGSS Zero Gate Voltage Drain Current Gate-Body Leakage Current VGS=0V , ID=250uA VDS=80V , VGS=0V 100 1 ±100 V uA nA VGS= ±20V , VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance b VDS=VGS , ID=250uA VGS=10V , ID=6A VGS=4.
5V , ID=5A VDS=10V , ID=6A 1 1.
6 100 150 5 3.
0 145 195 V m ohm m ohm S DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) tf Qg Qgs Qgd Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge b VDS=25V,VGS=0V f=1.
0MHz 480 47 29 pF pF pF VDD=50V ID=1A VGS=10V RGEN= 6 ohm VDS=50V,ID=6A,VGS=10V VDS...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)