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SiHFZ46-E3

Vishay
Part Number SiHFZ46-E3
Manufacturer Vishay
Description Power MOSFET
Published Aug 3, 2014
Detailed Description IRFZ46, SiHFZ46 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Conf...
Datasheet PDF File SiHFZ46-E3 PDF File

SiHFZ46-E3
SiHFZ46-E3

Overview
IRFZ46, SiHFZ46 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.
) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 66 21 25 Single D FEATURES • Dynamic dV/dt Rating 50 0.
024 • • • • • 175 °C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements Lead (Pb)-free Available Available RoHS* COMPLIANT DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.
The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
TO-220 G S G D S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-220 IRFZ46PbF SiHFZ46-E3 IRFZ46 SiHFZ46 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Currente Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d Mounting Torque for 10 s 6-32 or M3 screw TC = 25 °C EAS PD dV/dt TJ, Tstg VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM LIMIT 50 ± 20 50 38 220 1.
0 100 150 4.
5 - 55 to + 175 300 10 1.
1 W/°C mJ W V/ns °C lbf · in N·m A UNIT V Notes a.
Repetitive rating; pulse width limited by maximum junction temperature (see fig.
11).
b.
VDD = 25 V, starting TJ = 25 °C, L = 34 µH, RG = 25 Ω, IAS = 54 A (see fig.
12).
c.
ISD ≤ 54 A, dI/dt ≤ 250 A/µs, VDD ≤ VDS, TJ ≤ 175 °C.
d.
1.
6 mm from case e.
Current limited by the package, (die current = 54 A).
* Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 90372 S09-0070-Rev.
A, 02-Feb-09 Fo...


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