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SEMiX603GAL066HDs

Semikron
Part Number SEMiX603GAL066HDs
Manufacturer Semikron
Description IGBT
Published Aug 8, 2014
Detailed Description SEMiX603GAL066HDs SEMiX® 3s Trench IGBT Modules SEMiX603GAL066HDs Features • Homogeneous Si • Trench = Trenchgate techn...
Datasheet PDF File SEMiX603GAL066HDs PDF File

SEMiX603GAL066HDs
SEMiX603GAL066HDs

Overview
SEMiX603GAL066HDs SEMiX® 3s Trench IGBT Modules SEMiX603GAL066HDs Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • UL recognised file no.
E63532 Typical Applications* • Matrix Converter • Resonant Inverter • Current Source Inverter Remarks • Case temperature limited to TC=125°C max.
• Product reliability results are valid for Tj=150°C • For short circuit: Soft RGoff recommended • Take care of over-voltage caused by stray inductance Absolute Maximum Ratings Symbol Conditions IGBT VCES IC Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C ICnom ICRM ICRM = 2xICnom VGES tpsc Tj VCC = 360 V VGE ≤ 15 V VCES ≤ 600 V Tj = 150 °C I...


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