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NSS60200LT1G

Part Number	NSS60200LT1G
Manufacturer	ON Semiconductor
Description	PNP Transistor
Published	Aug 11, 2014
Detailed Description	NSS60200L 60 V, 4.0 A, Low VCE(sat) PNP Transistor ON Semiconductor’s e2PowerEdge family of low VCE(sat) transistors a...
Datasheet	NSS60200LT1G PDF File

Overview

NSS60200L 60 V, 4.
0 A, Low VCE(sat) PNP Transistor ON Semiconductor’s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability.
These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.
Typical applications are DC−DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives.
In the automotive industry they can be used in air bag deployment and in the instrument cluster.
The high current gain allows e2PowerEdge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers.
Features • NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TA = 25°C) Rating Symbol Max Unit Collector-Emitter Voltage VCEO −60 Vdc Collector-Base Voltage Emitter-Base Voltage Collector Current − Continuous Collector Current − Peak THERMAL CHARACTERISTICS VCBO VEBO IC ICM −80 Vdc −7.
0 Vdc −2.
0 A −4.
0 A Characteristic Symbol Max Unit Total Device Dissipation TA = 25°C Derate above 25°C PD (Note 1) 460 mW 3.
7 mW/°C Thermal Resistance, Junction−to−Ambient RqJA (Note 1) 270 °C/W Total Device Dissipation TA = 25°C Derate above 25°C PD (Note 2) 540 mW 4.
3 mW/°C Thermal Resistance, Junction−to−Ambient RqJA (Note 2) 230 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionali...

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